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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL128 DESCRIPTION *Collector-Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) *Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A *Very High Switching Speed APPLICATIONS *Designed for use in lighting applications and low cost switchmode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 700 UNIT V Collector Current-Continuous Collector Current-peak tp<5ms Base Current-Continuous ww w scs .i 400 9 4 8 2 4 70 150 -65~150 .cn mi e V V A A A A W IBM PC Ti Tstg Base Current-peak tp<5ms Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-A PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.78 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VCE(sat)-4 VBE(sat)-1 VBE(sat)-2 VBE(sat)-3 ICES ICEO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA; L= 25mH IE= 10mA; IC= 0 IC= 0.5A; IB= 0.1A IC= 1A; IB= 0.2A B BUL128 MIN 400 9 TYP. MAX UNIT V V 0.7 1.0 1.5 0.5 V V V V IC= 2.5A; IB= 0.5A IC= 4A; IB= 1A B IC= 0.5A; IB= 0.1A ww w scs .i B IC= 1A; IB= 0.2A IC= 2.5A; IB= 0.5A VCE= 700V; VBE= -1.5V VCE= 700V; VBE= -1.5V,TC= 125 VCE= 400V; IB= 0 IC= 10mA; VCE= 5V IC= 2A; VCE= 5V .cn mi e 10 14 1.1 1.2 1.3 0.1 0.5 0.25 V V V mA mA 40 Switching Times, Resistive Load ts tf Storage Time Fall Time 3.0 0.4 s s IC= 2A; VCC= 125V; IB1= -IB2= 0.4A; tp= 30s hFE-2 Classifications A 14-28 B 25-40 isc Websitewww.iscsemi.cn |
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